document number: 81845 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.4, 16-dec-10 1 usb-otg bus-port esd-protection for v bus = 12 v VBUS053AZ-HAF vishay semiconductors marking (example only) dot = pin 1 marking xx = date code yy = type code (see table below) features ? ultra compact llp75-7l package ? low package height < 0.6 mm ? 3-line usb esd-protection with max. working range = 5.5 v ?v bus - protection with 12 v working range ? low leakage current ? low load capacitance c d = 0.7 pf ? esd-protection to iec 61000-4-2 15 kv contact discharge 15 kv air discharge ? surge current acc. iec 61000-4-5 i pp > 3 a ? e4 - precious metal (e.g. ag, au, nipd, nipdau) (no sn) ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec 20517 1 6 4 5 1 2 3 7 21102 21001 xx yy ordering information device name ordering code taped units per reel (8 mm tape on 7" reel) minimum order quantity VBUS053AZ-HAF vbus053az- haf-gs08 15 000 15 000 package data device name package name type code weight molding compound flammability rating moisture sensitivity level soldering conditions VBUS053AZ-HAF llp75-7l u9 4.2 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals absolute maximum ratings parameter test conditions symbol value unit data line d+, d-, id: pin 1, 2 and 3 to ground (pin 7) peak pulse current acc. iec 61000-4-5; t p = 8/20 s; single shot i ppm 3a peak pulse power acc. iec 61000-4-5; t p = 8/20 s; single shot p pp 36 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 15 kv air discharge acc. iec 61000-4-2; 10 pulses v esd 15 kv v bus : pin 6 to ground (pin 7) peak pulse current acc. iec 61000- 4-5; tp = 8/20 s/single shot i ppm 8a peak pulse power acc. iec 61000-4- 5; tp = 8/20 s/single shot p pp 240 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv operating temperatur e junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c ** please see document ?vishay material category policy?: www.vishay.com/doc?99902 www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 81845 2 rev. 1.4, 16-dec-10 VBUS053AZ-HAF vishay semiconductors usb-otg bus-port esd-protection for v bus = 12 v note ? tamb = - 40 c to 85 c, unless otherwise specified note ? tamb = - 40 c to 85 c, unless otherwise specified electrical characteristics all inputs (pin 1, 2, and 3) to ground (pin 7) parameter test conditions/remarks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel - - 3 lines reverse working voltage at i r = 0.1 a v rwm 5.5 - - v reverse current at v r = v rwm = 3.3 v; t = 65 c i r - - 0.085 a at v r = v rwm = 5.5 v i r --1a forward voltage at i f = 15 ma v f 0.7 - 1.2 v reverse breakdown voltage at i r = 1 ma v br 6.5 - 10 v reverse clamping voltage at i pp = 1 a; acc. iec 61000-4-5; t = 25 c v c -1012v at i pp = 3 a; acc. iec 61000-4-5; t = 25 c v c -1518v forward clamping voltage at i f = 3 a; acc. iec 61000-4-5 v f -3.44.1v line capacitance test pin at v r = 0 v; any other i/o pin at v r = 3.3 v, f = 1 mhz c d -0.71pf line symmetry difference of the line capacitance dc d --0.1pf line to line capacitance among pins 1, 2 and 3 at v r = 0 v; f = 1 mhz c dd - 0.35 0.5 pf electrical characteristics v bus (pin 6) to ground (pin 7) parameter test conditions/remarks symbol min. typ. max. unit protection paths number of line which can be protected n channel --1line reverse working voltage at i r = 100 na v rwm 12 - - v reverse current at v r = v rwm = 12 v i r - - 100 na forward voltage at i f = 10 ma v f 0.6 0.75 0.9 v reverse breakdown voltage at i r = 1 ma v br 15 - 18 v reverse clamping voltage at i pp = 1 a; acc. iec 61000-4-5; t = 25 c v c - 17.5 20 v at i pp = 8 a; acc. iec 61000-4-5; t = 25 c v c -2530v forward clamping voltage at i f = 8 a; acc. iec 61000-4-5 v f --2.2v line capacitance at v r = 0 v, f = 1 mhz c d -7085pf www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 81845 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.4, 16-dec-10 3 VBUS053AZ-HAF usb-otg bus-port esd-protection for v bus = 12 v vishay semiconductors application note the VBUS053AZ-HAF is intended as an esd-protection and transient voltage suppressor for one usb-otg port. the llp75-7l package contains two separate dies which are mounted on a common ground plane (pin 7). the high-speed data lines d-, d+ and id, are connected to any of the pins no. 1 to 3. as long as the signal voltage on the data lines is between th e ground- and the 5 v working range, the low capacitance pn-diodes offer a very high isolation to ground and to the other data li nes. but as soon as any transient signal like an esd-signal, exceeds this working range of 5 v in either the positive or negative di rection, one of the pn-diodes gets into the forward mode and clamps the transient either to ground or to the avalanche break through lev el. an extra avalanche diode (separate die) clamps the supply line voltage (v bus at pin 6) above the 12 v working range to ground (pin 7). due to the ?two die construction? the v bus line has a very high isolation to the data lines. in case of a destructive transient signal, i.e. coming from a charger, the data lines will not be influenced. remark: the input pins no. 1, 2 and 3 are symmetrical. each of the da ta signals d-, d+ and id can be connected to pin 1, 2 or 3. typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - esd discharge current wave form acc. iec 61000-4-2 (330 /150 pf) fig. 2 - 8/20 s peak pulse current wave formacc. iec 61000-4-5 fig. 3 - typical capacitance c d vs. reverse voltage v r fig. 4 - typical capacitance c d vs. reverse voltage v r 3 6 54 7 1 2 6 5 7 1 2 4 3 nc. nc. d- d+ id g n d v bus 21103 (pinning top v ie w ) 0 % 20 % 40 % 60 % 8 0 % 100 % 120 % - 10 0 10 20 30 40 50 60 70 8 0 90 100 time (ns) discharge c u rrent i esd rise time = 0.7 ns to 1 ns 53 % 27 % 20557 0 % 20 % 40 % 60 % 8 0 % 100 % 010203040 time ( s) i ppm 20 s to 50 % 8 s to 100 % 2054 8 0 10 20 30 40 50 60 70 8 0 0 5 10 15 f = 1 mhz pin 6 to pin 7 v r ( v ) c d (pf) 2146 8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0 0.5 1 1.5 2 2.5 3 3.5 f = 1 mhz, one i/o pin at 3.3 v pin 1, 2 or 3 to pin 7 v r ( v ) c d (pf) 21469 www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 81845 4 rev. 1.4, 16-dec-10 VBUS053AZ-HAF vishay semiconductors usb-otg bus-port esd-protection for v bus = 12 v fig. 5 - typical forward current i f vs. forward voltage v f fig. 6 - typical reverse voltage v r vs. reverse current i r fig. 7 - typical peak clamping voltage v c vs. peak pulse current i pp fig. 8 - typical peak clamping voltage v c vs. peak pulse current i pp 0.001 0.01 0.1 1 10 100 0.5 0.6 0.7 0. 8 0.9 1 1.1 pin 6 to pin 7 pin 1, 2 or 3 to pin 7 21470 v f ( v ) i f (ma) 0 2 4 6 8 10 12 14 16 1 8 20 0.01 0.1 1 10 100 1000 10 000 pin 6 to pin 7 pin 1, 2 or 3 to pin 7 21471 i r ( a) v r ( v ) 0 2 4 6 8 10 12 14 16 1 8 01234 pin 1, 2 or 3 to pin 7 pin 7 to pin 1, 2 or 3 v f meas u red acc. iec 61000-4-5 ( 8 /20 s - w a v e form) 21472 i pp (a) v c ( v ) 0 5 10 15 20 25 30 01234567 8 91011 pin 6 to pin 7 pin 7 to pin 6 v c meas u red acc. iec 61000-4-5 ( 8 /20 s - w a v e form) 21473 i pp (a) v c ( v ) www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 81845 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.4, 16-dec-10 5 VBUS053AZ-HAF usb-otg bus-port esd-protection for v bus = 12 v vishay semiconductors package dimensions in millimeter s (inches): llp75-7l 1.05 (0.041) 0.5 (0.020) 0.95 (0.037) heat sink 0.3 (0.012) 0.2 (0.00 8 ) 0.3 (0.012) 0.2 (0.00 8 ) 0.3 (0.012) 0.2 (0.00 8 ) 0.55 (0.022) 0.45 (0.01 8 ) 0.6 (0.024) 0.25 (0.010) 0.6 (0.024) 0.54 (0.021) 0.05 (0.002) 0 (0.000) 0.15 (0.006) 1.65 (0.065) 1.55 (0.061) 1.65 (0.065) 1.55 (0.061) pin 1 marking 0.5 (0.020) 0.5 (0.020) 0.3 (0.012) 0.3 (0.012) 0.15 (0.006) 0.15 (0.006) 0.5 (0.020) 0.5 (0.020) 1 (0.039) 0.25 (0.010) solder resist mask solder pad doc u ment no.:s 8 - v -3906.02-014 (4) 20500 created - date: 04. april 2006 foot print recommendation: 1 (0.039) 1 (0.039) www.datasheet.co.kr datasheet pdf - http://www..net/
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